News

2022 - 05 - 27:

New paper accepted at ACS Applied Materials and Interfaces:

Monolithic and Single-Crystalline Aluminum–Silicon Heterostructures, opens an external URL in a new window

 

2022 - 04 - 28:

Our top-down fabricated Ge based RFET was featured in a research highlight in Advances in Engineering:

Top-down fabricated Ge based reconfigurable transistor, opens an external URL in a new window

 

2022 - 04 - 27:

Raphael, Böckle, MSc gives a poster presentation on "Bias-Switchable Photoconductance in a Nanoscale Ge Photodetector Operated in the Negative Differential Resistance Regime" at the Nanowire Week 2022, Chamonix, France.

 

2022 - 04 - 26:

Lukas Wind, MSc gives a talk on "Highly transparent Contacts to SixGe1-x Nanowires embedded in Metal-Semiconductor-Metal Heterostructures" at the Nanowire Week 2022, Chamonix, France.

 

2022 - 04 - 26:

Dr. Masiar Sistani gives a talk on "Programmable Negative Differential Resistance in Ge Nanowire Transistors" at the Nanowire Week 2022, Chamonix, France.

 

2022 - 04 - 25:

Our dear project partner Sven Barth gives a poster presentation on "Metastable Ge-based nanowire materials" at the Nanowire Week 2022, Chamonix, France. The presented materials will be implemented into nanowire based Schottky barrier field-effect transistors within our "HyperGe" collaboration.

 

2022 - 04 - 25:

Raphael, Böckle, MSc gives a poster presentation on "Low-frequency Noise in a Room-temperature quasi-ballistic Ge Transistor" at the Nanowire Week 2022, Chamonix, France.

 

2022 - 03 - 07:

We are happy to welcome our new master student Özgür Demirkiran, BSc., who will work togther with Lukas on reconfigurable logic cells.

 

2022 - 02 - 14:

We are happy to welcome our new master student Martina Bažíková, BSc. Martina will work together with Rapahael and Masiar on the "HyperGe" project.

 

2021 - 12 - 01:

Our NDR-mode RFET was featured in a research highlight:

Intelligent Transistor Developed at TU Wien, opens an external URL in a new window

 

2021 - 11 - 17:

Our new WiTec microscope has been updated with a polarizer for the exciting laser light and an additional beam-splitter to support our SuperK Extreme tunable laser source. The new updates will significantly enhance our capabilities to characterize Ge and GeSn photodetectors.

 

2021 - 11 - 12:

New paper accepted at ACS Photonics:

Bias-Switchable Photoconductance in a Nanoscale Ge Photodetector Operated in the Negative Differential Resistance Regime, opens an external URL in a new window

 

2021 - 11 - 10:

We thank Prof. Smoliner for sharing his Oxford bath cryostat equipped with a 7 T magnet with us. The cryostat will be an important tool for the characterization of the electrical transport properties of the Ge and GeSn nanowires of our "HyperGe"-project.

       

2021 - 11 - 03:

We are happy to welcome our new master students Melisa Mustajbasic, BSc and Kihye Kim, BSc.

 

2021 - 10 - 22:

New paper accepted at ACS Nano:

Nanometer-Scale Ge Based Adaptable Transistors Providing Programmable Negative Differential Resistance Enabling Multi Valued Logic, opens an external URL in a new window

 

2021 - 10 - 11:

Research highlight:

New Nanostructure could be the key to quantum electronics, opens an external URL in a new window

 

2021 - 10 - 01:

We are happy to welcome our new phd student Raphael Böckle, MSc. He will work on the integration and electrical characterization of SiGe and GeSn nanowire based devices.

 

2021 - 09 - 27:

Our DACH - Project Synthesis and Transport Phenomena of Nanocale, Metastable Solid Solutions and the Formation of Functional Heterostructures, opens an external URL in a new window, code name "HyperGe", was accepted for funding by the FWF. The project is a collaboration with the group of Dr. Sven Barth, Goethe-Universität Frankfurt, Germany. While Dr. Sven Barth will work on the synthesis of doped SiGe and GeSn nanowires, Dr. Masiar Sistani will be the principal investigator leading the team working on the nanowire device integration.

 

2021 - 09 - 24:

New paper accepted at Advanced Materials Technologies:

A Top-Down Platform Enabling Ge Based Reconfigurable Transistors, opens an external URL in a new window

 

2021 - 09 - 17:

Raphael, Böckle, MSc gives a talk on a "Top-down Fabricated Ge-based Reconfigurable FET, opens an external URL in a new window" at the EUROMAT 2021, Graz, Austria.

 

2021 - 09 - 16:

Dr. Masiar Sistani gives a talk on "Gate-Tunable Negative Differential Resistance in Next-Generation Ge Nanodevices and their Performance Metrics, opens an external URL in a new window" at the EUROMAT 2021, Graz, Austria.

 

2021 - 09 - 09:

New paper accepted:

Al–Ge–Al Nanowire Heterostructure: From Single‐Hole Quantum Dot to Josephson Effect, opens an external URL in a new window

 

2021 - 08 - 23:

Dr. Masiar Sistani was invited to give a talk on "A Ge Quantum Dot Monolithically Embedded in a Metal-Semicoductor Heterostructure, opens an external URL in a new window." at the JMC17, Grenoble, France.

 

2021 - 06 - 14:

The new WiTec microscope has arrived and features now a second laser source emitting at 768 nm for PL measurements.

 

2021 - 05 - 04:

New paper accepted at Advanced Electronic Materials:

Polycrystalline Ge Nanosheets Embedded in Metal‐Semiconductor Heterostructures Enabling Wafer‐Scale 3D Integration of Ge Nanodevices with Self‐Aligned Al Contacts, opens an external URL in a new window

 

2021 - 04 - 01:

We are happy to welcome our new phd student Lukas Wind, MSc. Lukas will work on the top-down fabrication of Ge and SiGe nanosheet based devices.

 

2021 - 03 - 25:

New paper accepted at Advanced Electronic Materials:

Gate‐Tunable Negative Differential Resistance in Next‐Generation Ge Nanodevices and their Performance Metrics, opens an external URL in a new window

 

2021 - 03 - 17:

New paper accepted at Applied Materials and Interfaces:

Monolithic Metal–Semiconductor–Metal Heterostructures Enabling Next-Generation Germanium Nanodevices, opens an external URL in a new window

 

2021 - 02 - 01:

We are happy to welcome our new postdoc Dr. Daniele Nazzari. He will work on the epitaxial growth of SiGe and Ge.

 

2021 - 01 - 18:

The new device characterization lab is now fully equipped.

 

2020 - 06 - 01:

We are happy to welcome our new student assistant Raphael Böckle, BSc. He will work on the investigation of NDR in Ge nanostructures and Ge RFETs.

 

2020 - 02 - 15:

We are happy to welcome our new postdoc Dr. Masiar Sistani. He will work on the device integration of bottom-up and top-down fabricated nanoscale SiGe and Ge nanowires and nanosheets.

 

2019 - 10 - 01:

Prof. Walter M. Weber moved from NaMLab gGmbH, Dresden to Vienna to become professor for nanoelectronic devices at the Institute of Solid State Electronics, TU Wien.