Curriculum Vitae

Michael Feiginov received an MSc degree in physics and electrical engineering from the Moscow Institute of Physics and Technology (Russia) in 1994 and a PhD in physics of semiconductors and dielectrics from the Institute of Radio-Engineering and Electronics (IREE), Russian Academy of Sciences (RAS) in Moscow (Russia) in 1999.

From 1994 to 2000, he worked at IREE RAS first as a Junior Scientist and later became a Senior Scientist.

In 2001 he joined the Chemnitz University of Technology (Germany), and the same year he was awarded Sofja Kovalevskaja Prize by the Alexander von Humboldt Foundation, Germany. In 2002 he joined the Technical University of Darmstadt (Germany) as a Senior Scientist, where he headed a THz research group for the next 11 years.

In 2013 he moved to Tokyo (Japan) to work at the Tokyo Institute of Technology for a year before joining the Frontier Research Centre of Canon Inc. In 2016 he was appointed as a Professor of high-frequency and THz electronics at TU Wien (Austria).


  • Main research topics
    • Resonant tunneling diodes (RTDs) and THz oscillators on their basis
    • Physics of fast electron transport in tunnel and low-dimensional semiconductor structures
    • THz sources, detectors and systems
    • Optoelectronic THz components (THz pin photodiodes, photomixers, non-linear optical components, etc.)
    • Plasmonics, especially THz plasmonics and low-dimensional plasma excitations
  • Research fields
    • Semiconductor theory
    • Electromagnetic design and analysis, particularly THz antennas, resonators, etc.
    • THz measurements
    • Microfabrication technology

Publication list (before 2016) , opens a file in a new window

Publication list TU Wien, opens an external URL in a new window, arranged by media (from 2016)