The 3DNanoSIMS project is an extension of the multi-technology ultra-high vacuum (UHV) nano-analytics operated at AIC to improve high-performance materials being developed for a wide range of future technologies with sustainability in mind, such as electrochemistry, semiconductor technology, materials development, and catalysis. The instrument used for this purpose is a time-of-flight secondary ion mass spectrometer (TOF-SIMS), which will be accessible to internal and external users.

September/October 2025

The M6 plus was delivered on 20th of September by truck from Münster. Installation began immediately afterwards. Over the course of the following weeks, all specifications were met and training began.

The AIC team would like to thank GUT and the employees of IONTOF for their kind support, which ensured that the delivery and installation went smoothly.

December 2023

An order for an M6 plus, opens an external URL in a new window was placed with IONTOF GmbH in Muenster, opens an external URL in a new window.

October 2023

June 2023

The project was approved.

The AIC would like to thank the FFG, opens an external URL in a new window for the funding of the project "3DNanoSMS", FFG Project No.902876.

March 2023

The 3DNanoSIMS project is an extension of the multi-technology ultra-high vacuum (UHV) nano-analytics operated at AIC to improve high-performance materials being developed for a wide range of future technologies with sustainability in mind, such as electrochemistry, semiconductor technology, materials development, and catalysis. The instrument used for this purpose is a time-of-flight secondary ion mass spectrometer (TOF-SIMS), which will be accessible to internal and external users.  To this end, a project application for research and development infrastructure funding, opens an external URL in a new window was submitted to the Austrian Research Promotion Agency FFG, opens an external URL in a new window. 

Four faculties are involved in the project:

• Faculty of Technical Chemistry
• Faculty of Mechanical and Industrial Engineering
• Faculty of Physics
• Faculty of Electrical Engineering and Information Technology

To ensure that the TOF-SIMS instrument meets all the requirements of the various materials research fields, the instrument will be equipped with a gas cluster ion source and a focusing gallium ion source (focused ion beam) in addition to the usual bismuth, oxygen and cesium ion sources. Installation of a scanning probe microscope (RSM) in combination with a high-precision piezo stage will enable simultaneous recording of topology before, during and after sample ablation. This will enable precise and nanoscopically resolved 3D reconstructions of complex materials. Important to note is also the significantly improved tolerance of the new spectrometer to rough and patterned sample surfaces. In-situ cross-preparation will be realized by the gallium focused ion beam, necessary for porous layers or complex structured samples. In addition, the system will be equipped with a novel high-performance preparation chamber, which will allow the analysis of nanoscopic processes occurring in materials under load.