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Among several ultra-sensitive receivers, a slow-slope reset scheme that reduces charge injection for highly-sensitive integrate-and-dump direct detection receivers was designed. The monolithic receiver OEIC utilized a source-follower front-end and low-capacitance PIN photodiode, to achieve high sensitivity at higher data rates (250 Mbit/s) than previous ultra-sensitive PIN receivers.

Both, the slow-slope and classical rectangular reset scheme, were fabricated with the same front-end, on the same wafer, in 180 nm high-voltage CMOS. The measured transient voltages were in agreement with theory and suggest effective mitigation of charge injection by the slow-slope reset. Using correlated double sampling (CDS), our improved receiver achieved a sensitivity of  -47.0 dBm at 250 Mbit/s with 50% return-to-zero (RZ) on-off-keying (OOK) modulation and -53.5 dBm at 100 Mbit/s with 80% RZ OOK modulation, both for the reference bit-error ratio (BER) of 0.002 and wavelength 642 nm. The difference to the shot noise quantum limit at 250 Mbit/s (100 Mbit/s) is 19.7 dB (17.2 dB), which is about equal to 4-SPAD receivers investigated in the project SPOR. In addition, we show that low charge injection enables single sampling, with sensitivities around 1 dB worse than with CDS.