Events
Past events can be found in the archive.
Internal users can find the list of upcoming seminar presentations and the seminar dates to be booked in the E134 Colab Space., opens an external URL in a new window
20. January 2026, 16:00 until 17:00
Andrea Fugger, TU Wien, IAP, FB Angewandte Grenzflächenphysik
Seminar
Semiconductor manufacturing is constantly searching for methods to achieve smaller process windows and improved yield. Proton implantation in addition to the standard ion implants is a promising method to reach that goal for Si-power MOSFETs. While there is a lot of literature about Hydrogen in Si base materials [1,2] or its use for lifetime adjustments and formation of field stop regions [3], its use as a dopant in the active region of power Devices is largely unexplored.
In this talk I will provide an overview of the advantages of H-implantation and two examples of challenges during industrial use. The main example concerns the technical implementation of the method in a production line. Key points here are the implant depth profile, the allowed temperature budget and the materials in the way of the beam, as well as potentially resulting radiation [4]. The second example introduces the influence of the implant on the parameters of finished devices and the consequences for the interpretation of measurement results.
[1] Y. Ohmura et al., Solid State Communications (1972)
[2] J. Laven et al., physica status solidi c (2011)
[3] Niedernostheide et al., 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD) (2016)
[4] A. Fugger et al., NIM-B (2025)
Event details
- Event location
-
SEM.R. DB gelb 05 B
1040 Wien
Wiedner Hauptstraße 8-10/E134 - Organiser
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IAP
Manuela Marik
marik@iap.tuwien.ac.at - Public
- Yes
- Entrance fee
- No
- Registration required
- No