Literature

 

  • 1 M. Feiginov, C. Sydlo, O. Cojocari, and P. Meissner, "Resonant-tunnelling-diode oscillators operating at frequencies above 1.1 THz," Appl. Phys. Lett. (selected as a research highlight) 99, 233506 (2011).
  • 2 M. Feiginov, H. Kanaya, S. Suzuki, and M. Asada, "Operation of resonant-tunneling diodes with strong back injection from the collector at frequencies up to 1.46 THz," Appl. Phys. Lett. 104, 243509 (2014).
  • 3 M. Feiginov, "Sub-THz and THz microstrip resonant-tunneling-diode oscillators," Appl. Phys. Lett. 107, 123504 (2015).
  • 4 M. Feiginov and D. Roy Chowdhury, "Operation of resonant-tunneling diodes beyond resonant-state-lifetime limit," Appl. Phys. Lett. (at the journal cover) 91, 203501 (2007).
  • 5 M. Feiginov, C. Sydlo, O. Cojocari, and P. Meissner, "Operation of resonant-tunnelling oscillators beyond tunnel-lifetime limit," EPL 94, 48007 (2011).
  • 6 M. Feiginov, "Effect of the Coulomb interaction on the response time and impedance of the resonant-tunneling diodes," Appl. Phys. Lett. 76, 2904-2906 (2000).
  • 7 M. Feiginov, "Displacement currents and the real part of high-frequency conductance of the resonant-tunneling diode," Appl. Phys. Lett. 78, 3301-3303 (2001).
  • 8 M. Feiginov, "Does the quasibound-state lifetime restrict the high-frequency operation of resonant-tunneling diodes?" Nano- technology 11, 359 (2000).
  • 9 M. Feiginov, C. Sydlo, O. Cojocari, and P. Meissner, "Operation of resonant-tunnelling-diode oscillators beyond tunnel- lifetime limit at 564 GHz," EPL 97, 58006 (2012).
  • 10 M. Feiginov, C. Sydlo, O. Cojocari, and P. Meissner, "High-frequency nonlinear characteristics of resonant-tunnelling diodes," Appl. Phys. Lett. 99, 133501 (2011).
  • 11 R. Mendis, C. Sydlo, J. Sigmund, M. Feiginov, P. Meissner, and H. Hartnagel, "Spectral characterization of broadband THz antennas by photoconductive mixing: toward optimal antenna design," Ant. and Wireless Prop. Lett., IEEE 4, 85 - 88 (2005).
  • 12 T. Gobel, D. Schoenherr, C. Sydlo, M. Feiginov, P. Meissner, and H. Hartnagel, "Continuous-wave terahertz system with electro-optical terahertz phase control," Electron. Lett. 44, 863{864 (2008).
  • 13 T. Gobel, D. Schoenherr, C. Sydlo, M. Feiginov, P. Meissner, and H. Hartnagel, "Single-sampling-point coherent detection in continuous-wave photomixing terahertz systems," Electron. Lett. 45, 65{66 (2009).
  • 14 T. Gobel, D. Schoenherr, C. Sydlo, M. Feiginov, P. Meissner, and H. Hartnagel, "Continuous-wave single-sampling-point characterisation of optoelectronic on-chip terahertz transceiver," Electron. Lett. 45, 1171-1172 (2009).
  • 15 A. Stohr, R. Heinzelmann, K. Hagedorn, R. Gusten, F. Schafer, H. Stuer, F. Siebe, P. van der Wal, V. Krozer, M. Feiginov, and D. Jager, "Integrated 460 GHz photonic transmitter module," Electron. Lett. 37, 1347-1348 (2001).
  • 16 M. Feiginov, "Analysis of limitations of terahertz p-i-n uni-traveling-carrier photodiodes," J. Appl. Phys. 102, 084510 (2007).
  • 17 M. Feiginov, "Negative differential conductance in the tunnel Schottky contact with two-dimensional channel," Appl. Phys. Lett. 81, 930-932 (2002).
  • 18 M. Feiginov and I. N. Kotel'nikov, "Evidence for attainability of negative differential conductance in tunnel Schottky structures with two-dimensional channels," Appl. Phys. Lett. 91, 083510 (2007).
  • 19 M. Feiginov, I. N. Kotelnikov, and N. A. Mordovets, "Strong inhomogeneity of the tunnel Schottky structures with σ-doped two-dimensional channels at large bias," Phys. Rev. B 82, 075318 (2010).
  • 20 M. Feiginov and V. A. Volkov, "Self-excitation of 2D plasmons in resonant tunneling diodes," JETP Lett. 68, 662-668 (1998).
  • 21 M. Feiginov and V. A. Volkov, "Skin effect and response of semiconductor barrier structures," JETP Lett. 69, 336-342 (1999).